发明名称 Semiconductor device
摘要 A power supply potential and a ground potential are supplied to a test-use power supply pad and a test-use ground pad, respectively. The power supply potential supplied to the test-use power supply pad is transferred to power supply lines and then to each circuit block via a test-use power supply line and a potential transfer circuit including a diode device. A voltage drop is caused by each of the diode devices. To cope with the voltage drop, however, respective sizes of the diode devices and resistance components of the potential transfer circuits are configured so that a uniform voltage drop is generated at each of the power supply lines.
申请公布号 US7256604(B1) 申请公布日期 2007.08.14
申请号 US20060639278 申请日期 2006.12.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 OTA SHUSAKU;SEGAWA HIROAKI;HIROFUJI MASANORI
分类号 G01R31/26 主分类号 G01R31/26
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