CAP WAFER, SEMICONDOCTOR CHIP HAVING THE SAME, AND FABRICATION METHOD THEREOF

摘要

A cap wafer, a semiconductor chip with the same, and a manufacturing method thereof are provided to improve the yield and to reduce fabrication costs by preventing the generation of crack or void using a penetrating electrode with a tilted cross-section. A cap wafer(110) includes a cap wafer substrate(111), at least one penetrating electrode, and at least one electrode pad. The penetrating electrode(112) penetrates into the cap wafer. The electrode pad is connected with a lower portion of the penetrating electrode at a lower surface of the cap wafer substrate. The penetrating electrode has a tilted cross-section, so that the size of a lower portion is larger than that of an upper portion.