| 摘要 |
A method for fabricating a semiconductor device is provided to improve alignment precision while reducing fabricating costs of a semiconductor device by using two kinds of alignment patterns in a photolithography process wherein the alignment patterns are formed in a first scribe region extending in a first direction, whereas the alignment patterns are not formed in a second scribe region extending in a second direction crossing the first direction. Semiconductor integrated circuits are formed in a plurality of semiconductor chip regions(2) of a semiconductor wafer to be formed as each semiconductor chip later. The semiconductor wafer is sawed along a scribe region(3) between the plurality of semiconductor chip regions. The scribe region includes a first scribe region(3a) extending in a first direction and a second scribe region(3b) extending in a second direction crossing the first direction. The width of the second scribe region is smaller than that of the first scribe region. In the process for forming semiconductor integrated circuits, two kinds of alignment patterns(13a,13b) used in a photolithography process are formed in the first scribe region, whereas the two kinds of alignment patterns are not formed in the second scribe region. The two kinds of alignment patterns can be alignment patterns for use in alignment in different directions.
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