IMAGE SENSOR APPLYING THE SUPPLY VOLTAGE TO THE BACKSIDE OF THE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE IMAGE SENSOR

摘要

An image sensor is provided to prevent a cross-talk phenomenon between pixels by applying a power supply voltage to the back surface of a semiconductor substrate. A semiconductor layer(130) of a first conductivity type is formed in a semiconductor substrate(120) of the first conductivity type. A semiconductor layer(140) of a second conductivity type is formed on the semiconductor layer of the first conductivity type. A power supply voltage receiving part(150) is formed on the back surface of the semiconductor substrate of the first conductivity type. The power supply voltage receiving part receives a power supply voltage(VDD) from the outside and applies the power supply voltage to the semiconductor substrate of the first conductivity type. The power supply voltage receiving part can include a metal pad that receives the power supply voltage and applies the power supply voltage to the semiconductor substrate of the first conductivity type.