METALLIC SILICIDE FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for forming metal silicide is provided to improve the reliability of forming metal silicide by making uniform the grain size of a metal silicide layer. A first metal layer including first metal is formed on a silicon-including semiconductor region in a first temperature at which the semiconductor region is silicidized with the first metal. A second metal layer including second metal is formed on the semiconductor region in a second temperature lower than the first temperature to cover the first metal layer. The semiconductor region is not silicidized with the second metal in the second temperature. A heat treatment is performed on the semiconductor region in which the first metal layer is covered with the second metal layer so that at least one of the first and second metal layers and the semiconductor region are silicidized to form a metal silicide layer(21sd).