| 摘要 |
A heat treatment jig for a semiconductor silicon substrate is provided to reduce the generation of a crystal defect in heat-processing a semiconductor silicon substrate by forming a cristobalited oxide layer in a region in contact with the back surface of the semiconductor silicon substrate. A heat treatment jig is mounted on a heat treatment boat in a vertical heat treatment furnace, coming in contact with a semiconductor silicon substrate(10). A cristobalited oxide layer is formed in the contact maintaining region. A mask plate(9b) having a greater diameter than that of the heat treatment jig is used together with the heat treatment jig so that the attach of particles generated by the cristobalited oxide layer to the semiconductor silicon substrate is prevented.
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