SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME HAVING STRUCTURE OF NON-ABSORBING MIRROR

摘要

A semiconductor laser device having a non-absorbing mirror structure and a fabrication method thereof are provided to reduce a fabrication cost by removing an edge pattern forming process and a re-growth process for forming a non-absorbing mirror structure by using a seed pattern structure with different see width according to a region. A fabrication method of a semiconductor laser device having a non-absorbing mirror structure includes the steps of: preparing a substrate(10); forming wing in a vertical direction to cavity or seed patterns(20) having different widths; forming a base layer(30) having a vertical growth step difference on the substrate(10) where the seed patterns(20) are formed; forming a lamination of a semiconductor layer(40) on the base layer(30); and completing a fabrication of the semiconductor laser device by forming a ridge-type contact layer(50) on the lamination of the semiconductor layer(40).