METHOD OF MANUFACTURING THIN FILM USING ICP-MOCVD METHOD

摘要

A method of manufacturing a single crystalline zinc oxide thin film with high quality by using an inductively coupled plasma apparatus and a metal organic chemical vapor deposition apparatus is provided. A method of manufacturing a thin film comprises the steps of: providing a substrate in a chamber of a metal organic chemical vapor deposition(MOCVD) apparatus; generating plasma within the chamber by using an inductively coupled plasma(ICP) apparatus; and spraying an organic metal source into the chamber to deposit a thin film onto the substrate. The method further comprises the step of forming a buffer layer on the substrate after the step of providing the substrate in the chamber. The substrate or the buffer layer is made from any one selected from the group consisting of Si, Al2O3, SiC, GaN, and AlN. The organic metal source is a zinc(Zn) source or DEZn(diethylene zinc).