| 摘要 |
<p>Provided are an oxide sintered body, an oxide film prepared by the sputtering target method using the oxide sintered body which is transparent to near UV, and a transparent substrate containing the oxide film. The oxide sintered body comprises gallium, indium and oxygen mainly, wherein the content of gallium is greater than 65 atom% and less than 100 atom% to the total metal element, and the sintered body has a density of 5.0 g/cm^3 or more. Preferably the oxide sintered body comprises at least one phase selected from a gallium oxide (beta-Ga2O3) phase having beta-Ga2O3 type structure, a gallium indium oxide (beta-GaInO3) phase having beta-Ga2O3 type structure, and a (Ga, In)2O3 phase.</p> |
