| 摘要 |
A semiconductor device is provided to prevent contact holes from being electrically short-circuited by a bowing phenomenon by arranging the contact holes of an oval type in a manner that the major axes of the contact holes adjoin each other. A lower conductive layer is formed on a semiconductor substrate(100). The lower conductive layer is covered with an interlayer dielectric(150). A plurality of contact holes(161,162,163) are formed in the interlayer dielectric, exposing the upper surface of the lower conductive layer and having their upper surfaces of an oval type. The plurality of contact holes are arranged more nearer to the major axes of the upper surface of the contact holes than the minor axes of the upper surface. The contact holes are filled with contact plugs(171,172,173). The contact hole can have an aspect ratio of 10~40 and a depth of 1.5 nanometers or more. |
