| 摘要 |
A semiconductor memory device controlling an output voltage level of a high voltage generator according to temperature variation is provided to prevent the degradation of program or erase characteristics of a memory cell. A semiconductor memory device(100) includes a memory cell array(110) and a high voltage generator(120). The high voltage generator provides a high voltage higher than a power supply voltage to the memory cell array through an output port, and generates a temperature detection signal by detecting the variation of a diode current according to temperature variation, and controls the voltage level of the output port in response to the temperature detection signal. The high voltage generator includes a pump circuit(130) generating the high voltage by pumping the power supply voltage, a regulator(140) regulating the output voltage of the pump circuit in response to the temperature detection signal, and a temperature detector(150) generating the temperature detection signal by detecting the variation of the diode current according to temperature variation.
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