发明名称 PHOTORESIST AND METHOD FOR FORMING PHOTORESIST PATTERN USING THE SAME
摘要 Provided is a photoresist having improved flowability and excellent adhesion, and improving thickness uniformity of coating film upon coating of photoresist. A photoresist comprises 10-20wt% of a polymer resin, 2-10wt% of a photosensitive compound, and 60-90wt% of a solvent. The polymer resin contains an alkylol cresol novolak resin represented by the following formula(1), wherein each R1, R2, R3, and R4 is a hydrogen atom or alkyl group, and at least one of the R1, R2, R3, and R4 is a hydroxy alkyl group. The polymer resin has a weight average molecular weight of 3000-10000.
申请公布号 KR20070080468(A) 申请公布日期 2007.08.10
申请号 KR20060011806 申请日期 2006.02.07
申请人 SAMSUNG ELECTRONICS CO., LTD.;AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 JEON, WOO SEOK;LEE, HI KUK;KANG, DEOK MAN;OH, SAE TAE;CHO, HYUN WOO
分类号 G03F7/022;G03C1/00 主分类号 G03F7/022
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