A PROCESS FOR SILICON MONOCRYSTALS GROWTH BY CRUSIBLELESS ZONE MELTING

摘要

A process for silicon monocrystals growth by crusibleless zone melting on a nucleator comprises preliminary heating of starting rod and cnucleator to given temperature, crystal setting, formation of melting zone by means of induction heater and displacement of melting zone along starting half-finished product, at that heating of starting rod and nucleator are made by means of electron heater on the base of high-voltage glow discharge with empty anode.