| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve high speed writing by reducing a variation in the write performance of a nonvolatile semiconductor memory device. <P>SOLUTION: At the write operation of the nonvolatile semiconductor memory device, an electric charge is accumulated in a certain capacity provided at each write-in cell and the write is carried out by injecting hot electrons generated when the charge is discharged via a memory cell into a floating gate. Thus, the variation in the write performance of the nonvolatile semiconductor memory device is reduced, thereby the high speed writing is achieved. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
