发明名称 |
FAILURE DETECTOR OF INSULATED GATE POWER SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a failure detector of an insulated gate power semiconductor element for accurately detecting a short-circuit failure and a break failure in the insulated gate power semiconductor elements. SOLUTION: In the failure detector, a short-circuit failure detecting section 17 detects the short-circuit failure by comparing an on-gate current flowing from a gate driving circuit 13 of the semiconductor element 12 to a gate G or an off-gate current flowing from the gate G to the gate driving circuit 13 of the semiconductor element 12 with a normal current. A break failure detecting section 16 detects the break failure by comparing the off-gate current flowing from the gate G of the semiconductor element 12 to the gate driving circuit 13 with the robust current. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007202238(A) |
申请公布日期 |
2007.08.09 |
申请号 |
JP20060014977 |
申请日期 |
2006.01.24 |
申请人 |
TOKYO ELECTRIC POWER CO INC:THE |
发明人 |
NAKAJIMA TATSUTO;SUGANO JIYUNYA;MIYAZAKI SATOSHI |
分类号 |
H02M1/00 |
主分类号 |
H02M1/00 |
代理机构 |
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代理人 |
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主权项 |
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