发明名称 FAILURE DETECTOR OF INSULATED GATE POWER SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a failure detector of an insulated gate power semiconductor element for accurately detecting a short-circuit failure and a break failure in the insulated gate power semiconductor elements. SOLUTION: In the failure detector, a short-circuit failure detecting section 17 detects the short-circuit failure by comparing an on-gate current flowing from a gate driving circuit 13 of the semiconductor element 12 to a gate G or an off-gate current flowing from the gate G to the gate driving circuit 13 of the semiconductor element 12 with a normal current. A break failure detecting section 16 detects the break failure by comparing the off-gate current flowing from the gate G of the semiconductor element 12 to the gate driving circuit 13 with the robust current. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007202238(A) 申请公布日期 2007.08.09
申请号 JP20060014977 申请日期 2006.01.24
申请人 TOKYO ELECTRIC POWER CO INC:THE 发明人 NAKAJIMA TATSUTO;SUGANO JIYUNYA;MIYAZAKI SATOSHI
分类号 H02M1/00 主分类号 H02M1/00
代理机构 代理人
主权项
地址