| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which offers fine laser characteristics without lowering productivity, and a manufacturing method for the semiconductor laser element. SOLUTION: The semiconductor laser element includes a first conductive AlGaInP clad layer 4 overlaid on a board 2, an active layer 5, a ridge portion 12 containing a second conductive AlGaInP clad layer 8 and a second conductive GaAs contact layer 10 laminated in order, a second conductive electrode 13 formed on the side face of the ridge portion 12, and a first conductive electrode 14 which is formed on the face of board 2 that is opposite to the direction of lamination of the above layers. An impurity in the second conductive AlGaInP clad layer 8 is Zn, and a carrier concentration of the second conductive GaAs contact layer 10 is higher than that of the second conductive AlGaInP clad layer 8. A first conductive GaAs cap layer 11 is formed on the second conductive GaAs contact layer 10. COPYRIGHT: (C)2007,JPO&INPIT
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