发明名称 |
METAL OXIDE SEMICONDUCTOR TRANSISTOR |
摘要 |
A metal oxide semiconductor (MOS) transistor is disclosed. The MOS transistor includes: a semiconductor substrate; a gate disposed on the semiconductor substrate, wherein the gate comprises two sidewalls; a spacer formed on the sidewalls of the gate; a source/drain region disposed in the semiconductor substrate; a silicide layer disposed on top of the gate and the surface of the source/drain region; and a retarded interface layer disposed in the junction between the silicide layer and the gate and source/drain region.
|
申请公布号 |
US2007181955(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070691485 |
申请日期 |
2007.03.26 |
申请人 |
CHEN MING-TSUNG;HUANG CHANG-CHI;TSAO PO-CHAO |
发明人 |
CHEN MING-TSUNG;HUANG CHANG-CHI;TSAO PO-CHAO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|