发明名称 MULTI BANK SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR ENABLING MULTI BANK THEREOF
摘要 A multi bank semiconductor memory device and a parallel bit test method thereof are provided to perform a test at a high speed insensitively to noise by enabling a bank in a zigzag type during a multi bank parallel test. A multi bank semiconductor memory device includes M banks. A bank enable signal generation part selects N banks not adjacent to each other among the M banks according to a test mode signal and a bank address signal and then enables the selected N banks. The bank enable signal generation part comprises a logic circuit to select banks arranged in zigzag. The logic circuit receives bank address signals to enable the banks.
申请公布号 KR20070080044(A) 申请公布日期 2007.08.09
申请号 KR20060011098 申请日期 2006.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KWANG HYUN;BAE, WON IL
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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