发明名称 |
MULTI BANK SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR ENABLING MULTI BANK THEREOF |
摘要 |
A multi bank semiconductor memory device and a parallel bit test method thereof are provided to perform a test at a high speed insensitively to noise by enabling a bank in a zigzag type during a multi bank parallel test. A multi bank semiconductor memory device includes M banks. A bank enable signal generation part selects N banks not adjacent to each other among the M banks according to a test mode signal and a bank address signal and then enables the selected N banks. The bank enable signal generation part comprises a logic circuit to select banks arranged in zigzag. The logic circuit receives bank address signals to enable the banks.
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申请公布号 |
KR20070080044(A) |
申请公布日期 |
2007.08.09 |
申请号 |
KR20060011098 |
申请日期 |
2006.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KWANG HYUN;BAE, WON IL |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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