GROWING METHOD OF N-TYPE GROUP III NITRIDE COMPOUND SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To improve a conduction rate while suitable crystallinity is maintained in an n-type group III nitride compound semiconductor layer.

SOLUTION: Mixture of nitrogen gas and hydrogen gas is used as carrier gas used when the n-type group III nitride compound semiconductor layer is grown by an MOCVD method. A mixed volume rate of hydrogen gas is made into 5 to 30%.

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