| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution which is suitable for chemical and mechanical polishing of an object to be processed in the manufacturing step for a semiconductor device, in which coagulation or sedimentation of abrasive grain is hard to occur even when a concentrated liquid containing abrasive grain is prepared, and which is so easy-to-handle that it can be prepared as a concentrated liquid that is diluted when it is used. <P>SOLUTION: The polishing solution for metal is used for chemical and mechanical planarization in the step of manufacturing a semiconductor device. It contains an oxidant, amino acid or aminopoly acid, heterocyclic compound, abrasive grains which are made of a complex of two or more substances and of which average particle size is 120 nm or more, and water. When the polishing solution is used for chemical and mechanical planarization, it is diluted by water or water solution. The abrasive grains preferably contains silica. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
