发明名称 Page buffer circuit of flash memory device and program operation method thereof
摘要 A page buffer circuit includes a bit line selection circuit, a main register, a program transmission circuit, a temporary register, and a verification transmission circuit. The verification transmission circuit transmits data stored in the temporary register to the main register through a sensing node in response to a transmission control signal during a program verification operation. A memory cell that has been determined to be programmed in a previous program verification process is verified again in a next program verification process.
申请公布号 US2007183199(A1) 申请公布日期 2007.08.09
申请号 US20060479959 申请日期 2006.06.30
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 CHUNG JUN SEOP
分类号 G11C14/00;G11C7/10;G11C11/34;G11C16/06 主分类号 G11C14/00
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