发明名称 |
High voltage semiconductor devices and methods for fabricating the same |
摘要 |
High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying the substrate, comprising a gate dielectric layer and a gate electrode formed thereon. A channel well and a second well are formed in portions of the first well. A source region is formed in a portion of the channel well. A drain region is formed in a portion of the second well, wherein the gate dielectric layer comprises a relatively thinner portion at one end of the gate stack adjacent to the source region and a relatively thicker portion at one end of the gate stack adjacent to and directly contacts the drain region.
|
申请公布号 |
US2007181941(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20060351154 |
申请日期 |
2006.02.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN YI-CHUN;WU KUO-MING;LIU RUEY-HSIN |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|