发明名称 |
CMP CLEAN PROCESS FOR HIGH PERFORMANCE COPPER/LOW-K DEVICES |
摘要 |
A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.
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申请公布号 |
US2007181532(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070734061 |
申请日期 |
2007.04.11 |
申请人 |
TEXAS INSTRUMENTS, INCORPORATED |
发明人 |
EISSA MONA M.;DOKE NILESH S.;ZIELINSKI EDEN M.;SHINN GREGORY B. |
分类号 |
B08B3/00;B44C1/22;C23F1/00;C23G1/20;H01L21/02;H01L21/302;H01L21/321;H01L21/3213;H01L21/461 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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