发明名称 CMP CLEAN PROCESS FOR HIGH PERFORMANCE COPPER/LOW-K DEVICES
摘要 A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.
申请公布号 US2007181532(A1) 申请公布日期 2007.08.09
申请号 US20070734061 申请日期 2007.04.11
申请人 TEXAS INSTRUMENTS, INCORPORATED 发明人 EISSA MONA M.;DOKE NILESH S.;ZIELINSKI EDEN M.;SHINN GREGORY B.
分类号 B08B3/00;B44C1/22;C23F1/00;C23G1/20;H01L21/02;H01L21/302;H01L21/321;H01L21/3213;H01L21/461 主分类号 B08B3/00
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