| 摘要 |
A laser annealing method, a laser annealing system, a semiconductor layer, a semiconductor device, and an electro-optic device are provided to simplify a manufacturing process by increasing selectively crystallinity. A first melting region having a uniform width is formed within a first section(A1) of a band-like region by scanning and irradiating continuous wave laser beams onto the first section of the band-like region of a non-single crystal semiconductor layer. A melted part of the first melting region is partially solidified. A sub-part of the solidified part of the first melting region is melted. A second melting region is formed within a second section(A2) of the band-like region under a condition of increasing gradually the width of the second melting region from the width of the sub-part of the first melting region in a boundary between the first section and the second section by scanning and irradiating the continuous wave laser beams onto the second section of the band-like region. A third melting region is formed within a third section(A3) of the band-like region under a condition of equalizing the width of the third melting region with the width of the second melting region in a boundary between the second section and the third section by scanning and irradiating the continuous wave laser beams onto the third section of the band-like region. |
