| 摘要 |
<P>PROBLEM TO BE SOLVED: To maintain sufficient crystallinity with little surface roughness and to sufficiently maintain an Ir characteristic while high output is realized by thinning an AlGaN barrier layer in an MQW light emitting layer of a group III nitride compound semiconductor light emitting element. <P>SOLUTION: The barrier layer is set to be a two-layered structure of a first barrier layer formed of AlGaN and a second barrier layer formed of GaN. It is desirable that film thickness of the first barrier is set to be 3 nm or below. The first barrier layer is directly brought into contact with an InGaN well layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
