| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce leak current while suppressing fall in capacity of a capacitor. <P>SOLUTION: The process for fabricating a capacitor comprises steps of: (A) forming the lower electrode 20 of a capacitor 60 on a semiconductor substrate 10; (B) introducing ozone and inert gas simultaneously for a predetermined period into the reaction chamber 71 of atomic layer deposition equipment in which the semiconductor substrate 10 is placed; (C) exhausting ozone in the reaction chamber 71 by stopping introduction of ozone and introducing only inert gas; (D) forming a capacitor insulation film 40 on the lower electrode 20 by atomic layer deposition method which follows the steps (B) and (C); and (E) forming the upper electrode 50 of the capacitor 60 on the capacitor insulation film 40. <P>COPYRIGHT: (C)2007,JPO&INPIT |
