| 摘要 |
PROBLEM TO BE SOLVED: To provide a metallic member in a semiconductor working apparatus or the like in contact with halogen gas, particularly, with fluorine (F<SB>2</SB>) gas and fluoride gas which has excellent halogen gas resistance. SOLUTION: The surfaces of metallic base materials 31, 34 are provided with an ion implantation layer 32 of one or more kinds of metallic elements selected from Al, Ba, Ca, Mg and Y reacted with F<SB>2</SB>gas and fluoride gas, but in which the vapor pressure of the resultant reaction product is low by using an ion implantation method or a plasma implantation method. Further, the surface of the ion implantation layer 32 is further stacked with a thin film 33 comprising metal selected from Al, Ba, Ca, Mg and Y. COPYRIGHT: (C)2007,JPO&INPIT
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