Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method

摘要

A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.