LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A light emitting diode and a fabrication method thereof are provided to implement an active matrix type light emitting diode by forming a normal top structure while using amorphous-silicon thin film transistor. A light emitting diode includes a substrate(210) and a thin film transistor part(230) formed on the substrate. A planarization film(250) is formed on the thin film transistor and has a contact hole. A contact electrode(280) is formed on the planarization film and is electrically connected to a source(235) or a drain electrode(236) of the thin film transistor part through the contact hole. A first electrode(241) is formed on the planarization film as being separated from an outer adjacent region of the contact electrode. An emission layer(243) is formed on the first electrode as covering the first electrode and being overlapped with the outer adjacent region of the contact electrode. A second electrode(244) is formed on the emission layer to be connected to a part of the contact electrode.