| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a program method for a flash memory in which the reduction of a read margin caused by high-temperature stress can be compensated. <P>SOLUTION: The invention relates to the program method for the flash memory device provided with first and second bit lines connected with a plurality of memory cells for storing multi-bit data indicating one of a plurality of states. The program method includes a step in which the memory cell connected to the selected row and and the second bit line is programmed by multi-bit data, and a step in which the programmed memory cell connected to the selected row as a final row and the first bit line is reprogrammed so that the read margin between adjacent states reduced due to high-temperature stress increases. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
