| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of properly storing inverted data so as to effectively reduce a memory cell current without an increases in area of a memory cell array. <P>SOLUTION: The semiconductor memory device is provided with: a memory cell array 1100 in which signal sampling data continuous in time is selectively inverted and stored in advance; and data inversion processing section 1300 for inverting and outputting one of the plurality of data based on the plurality of data read from the memory cell array over a plurality of continuous cycles in a predetermined address sequence. The data inversion processing section 1300 judges the continuity of the plurality of data read from the memory cell array 1100 over the plurality of cycles, and inverts and outputs data read from the memory cell array at, for example, a current cycle when there is no continuity. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
