| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a rewriting device and a rewriting method for a nonvolatile memory, capable of reducing a time necessary for rewriting processing. <P>SOLUTION: When executing the rewriting processing of a flash memory 28 by repeating writing of download data and erasure of already written data with each sector 29 of the flash memory 28 as a sequential processing target, a checksum table 28A showing a checksum of the already written data of each sector 29 is stored in the flash memory 28, a checksum table 34C of the download data 34 produced in a storage capacity unit corresponding to each sector 29 is acquired, the checksum table 28A and a checksum table 34C corresponding to each sector 29 are compared, the execution of the writing and the erasure with the sector 29 decided that a value accords as the processing target is eliminated, and the checksum table 28A is updated every time the rewriting processing is executed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
