| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device having sufficient initial characteristics and a film structure which is excellent in heat radiating property, in high output laser oscillation for stably achieving high output laser oscillation in a long term without decreasing the optical damage level of an outgoing end surface. SOLUTION: This semiconductor laser device is provided with an active layer on a semiconductor substrate and resonators faced to the both ends of the semiconductor substrate, wherein a first dielectric film formed of oxide and a second dielectric film formed of oxynitride are successively laminated on the resonator end surface. COPYRIGHT: (C)2007,JPO&INPIT
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