| 摘要 |
PROBLEM TO BE SOLVED: To obtain a self-excited laser that can be operated at a high temperature and has low noise characteristics with excellent reproducibility in a multi-wavelength semiconductor laser device formed on the same substrate. SOLUTION: In an infrared laser region; a lower side clad layer 12, an active layer 13, a first upper side clad layer 14, an etching stop layer 15, and a second upper side layer 16 that is to be a ridge section, are sequentially laminated on the substrate 10. In a red laser region; a lower side clad layer 22, an active layer 23, a first upper side clad layer 24, an etching stop layer 25, and a second upper side clad layer 26 that is to be a ridge section, are sequentially laminated on the substrate 10. The thickness of the etching stop layer 15 in the infrared layer is different from that of the etching stop layer 15 in the red laser. COPYRIGHT: (C)2007,JPO&INPIT
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