| 摘要 |
PROBLEM TO BE SOLVED: To provide a photonic crystal optical semiconductor device in which electric current is highly efficiently injected into a line defect waveguide structure. SOLUTION: The photonic crystal optical semiconductor device comprises a semiconductor substrate; a lower clad layer laminated on the semiconductor layer, a mesa stripe-shaped active layer laminated on the lower clad layer, a current block layer laminated on both sides of the active layer to embed the active layer, an upper clad layer laminated above the active layer and on the current block layer, a contact layer laminated on the upper clad layer, a lower electrode formed on the underside of the semiconductor layer, and an upper electrode formed on the top surface of the contract layer. Moreover, the photonic crystal optical semiconductor device is formed with hole forming regions having a plurality of holes that are formed to extend from the contact layer towards the laminated upper clad layer to reach a position deeper than the lower surface of the active layer, and that are disposed in a grid form such that a periodic structure of a two-dimensional refractive index is formed in a surface perpendicular to the lamination direction; and a line defect waveguide region that is disposed between the hole forming regions to have a center plane in the widthwise direction consistent with the center plane in the widthwise direction of the active layer. COPYRIGHT: (C)2007,JPO&INPIT
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