发明名称 DEVICE AND METHOD FOR VAPOR PHASE GROWTH
摘要 PROBLEM TO BE SOLVED: To provide a vapor phase growth device capable of forming a film having a uniform thickness on a surface of a substrate to be processed. SOLUTION: The vapor phase growth device comprises an intermediate flow path constituting member 7 which has an opening 10 and is formed cylindrically, a substrate holding member 12 arranged in the opening 10, and a susceptor 13 connected to the substrate holding member 12. The intermediate flow path constituting member 7 contains a bottom plate 8 having an inner surface formed in a planar shape. The substrate holding member 12 has a planar substrate holding surface 12c. The substrate holding member 12 contains a substrate arranging recess 12a formed on the planar substrate holding surface 12c for arranging a substrate 11 to be processed. The substrate holding member 12 is arranged so that the substrate holding surface 12c is disposed on a more outer side than the inner surface of the bottom plate 8. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007201098(A) 申请公布日期 2007.08.09
申请号 JP20060016701 申请日期 2006.01.25
申请人 SHARP CORP 发明人 OKADA TOSHINORI
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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