| 摘要 |
PROBLEM TO BE SOLVED: To make erroneous writing and erroneous deletion into an adjacent magnetoresistance effect cell hard to occur even if a size of the magnetoresistance effect cell is miniaturized much more. SOLUTION: A magnetic memory element 101 comprises the magnetoresistance effect cell 7 where a fixed magnetic layer 4, an insulating layer 5, and a free magnetic layer 6 are sequentially laminated; a piezoelectric layer 11; and a metal layer 12. Holes 14 having width smaller than length on a layer face direction of the free magnetic layer 6 are formed in the metal layer 12 and the piezoelectric layer 11. Thickness of the piezoelectric layer 11 becomes small when an electric field is added. Nearfield light generated when the hole 14 is irradiated with light reaches the free magnetic layer 6 only when the electric field is added to the piezoelectric layer 11, and the temperature of the layer is raised. Even if the adjacent magnetic memory element 101 is irradiated with light, the electric field can be added only to the piezoelectric layer 11 on the desired magnetic memory element 101. Thus, erroneous writing is prevented. COPYRIGHT: (C)2007,JPO&INPIT
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