| 摘要 |
A plasma processing unit includes: a processing chamber ( 10 ); a first electrode ( 5 ) and a second electrode ( 11 ) which are placed in the processing chamber ( 10 ) and arranged to face each other; and a quartz plate ( 13 ) arranged on one of the surfaces of the first electrode ( 5 ) facing the second electrode ( 11 ) to protect the first electrode ( 5 ), the plasma processing unit being configured to excite reaction gas in the processing chamber ( 11 ) to generate plasma between the first electrode ( 5 ) and the second electrode ( 11 ) so that a target object placed on one of the surfaces of the second electrode ( 11 ) facing the first electrode ( 5 ) is subjected to plasma processing, wherein one of the surfaces of the quartz plate ( 13 ) facing the second electrode ( 11 ) is rough-finished.
|
