| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck for attracting a silicon wafer by electrostatic force under a pressure of 1×10<SP>-2</SP>Torr or less and at a temperature of 100°C or more in which uniform heating properties of an article to be attracted, i. e. an Si wafer, can be enhanced. <P>SOLUTION: The electrostatic chuck for attracting a silicon wafer by electrostatic force under a pressure of 1×10<SP>-2</SP>Torr or less and at a temperature of 100°C or more comprises a disklike substrate composed of ceramics, an insulating dielectric layer 1 composed of the same kind of ceramics as that of the substrate provided on the substrate, and an electrode buried between the substrate and the insulating dielectric layer 1 wherein a plurality of protrusions and recesses are formed on the surface of the insulating dielectric layer 1, and surface roughness Ra of the surface on the bottom of the recess 3 is 0.5 μm or more. <P>COPYRIGHT: (C)2007,JPO&INPIT |
