| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which the voltage at the normal use and the voltage necessary at the burn-in test can be respectively generated from one boosted voltage generating circuit. SOLUTION: Program circuits 3a, 3b are provided as the program circuits to produce signals for adjusting the voltage to be generated in the boosted voltage generating circuit 2, and a setting for adjusting the voltage to one at the normal use is programmed to the program circuit 3a, and a setting for adjusting the voltage to one necessary at the burn-in test is programmed to the program circuit 3b. At the burn-in test, an output signal of the program circuit 3b is selected by a selection circuit 4 and input to the boosted voltage generating circuit 2 to generate the voltage necessary at the burn-in test by the boosted voltage generating circuit 2. Similarly, an output signal of the program circuit 3a is selected by a selection circuit 4 at the normal use. COPYRIGHT: (C)2007,JPO&INPIT
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