| 摘要 |
A serial thermal processing arrangement for treating a wafer of semiconductor material, by performing plural formic acid treatment steps on the wafer. The wafer is load into a chamber at an initial station at atmospheric pressure and the chamber is purged with nitrogen gas; formic acid vapor and nitrogen are introduced at a first (1) and second (2) subsequent stations, where the wafer is heated at ambient atmospheric pressure; the wafer is rotated to a third subsequent station (3) under vacuum and heated in the absence of chemical treatment; the wafer is rotated to a fourth subsequent station (4), formic acid vapor and nitrogen are introduced and the wafer is heated at ambient atmospheric pressure; the wafer is rotated to a fifth subsequent station (5), nitrogen gas is introduced, and the wafer is cooled at ambient atmospheric pressure; and the wafer is rotated to a sixth subsequent station (6) for unloading the wafer from its chamber. |
