SEMICONDUCTOR MEASURING APPARATUS AND SEMICONDUCTOR MEASURING METHOD
摘要
<p>Provided is a semiconductor measuring apparatus which can evaluate complicated fine structures by two-dimensionally scanning the surface of a semiconductor substrate whereupon a fine structure is formed with an electron beam and measuring a substrate current of that time. The semiconductor measuring apparatus is configured to irradiate a semiconductor substrate with an electron beam and obtain an evaluation value of a fine structure formed on the semiconductor substrate from a substrate current induced to the semiconductor substrate by the electron beam. The semiconductor measuring apparatus is characterized in that the apparatus is provided with an evaluating means for obtaining the evaluation value of the fine structure based on the waveform of the substrate current when the waveform of the substrate current is regarded as a differential waveform.</p>
