METHOD OF FABRICATING MASKROM OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a mask ROM of a semiconductor device is provided to stabilize operational characteristics of the semiconductor device by preventing implantation of coding ions into an unintended part such as an active region. A gate electrode(114) is formed on a semiconductor substrate(110). An interlayer dielectric(118) is formed to cover the semiconductor substrate including the gate electrode. A code pattern(120) is formed on the interlayer dielectric. A coding ion implantation process is performed by using the code pattern as a mask. Spacers are formed on both sidewalls of the gate electrode. The interlayer dielectric is formed with a silicon oxide. The interlayer dielectric is planarized by an etch-back process. The code pattern is formed with a photoresist. The interlayer dielectric is etched by using the code pattern as a mask.