| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating an exhaust gas generated from a semiconductor manufacturing process in which a hardly decomposable-perfluorocompound or the like contained in an exhaust gas generated from semiconductor manufacturing process, an LCD manufacturing process or the like can be removed at 800°C or less, so that an exhaust gas containing a large volume and/or high concentration of perfluorocompound can be treated corresponding to an amount of a catalyst filled. <P>SOLUTION: The apparatus for treating an exhaust gas comprises an exhaust gas-inflow port inflowing an exhaust gas, an air injection port connected to the exhaust gas-inflow port and supplying air, an adsorption reaction unit connected to the exhaust gas-inflow port and including an adsorption layer for subjecting the exhaust gas inflowed through the exhaust gas-inflow port to an adsorption treatment, a catalyst reaction unit connected to the adsorption reaction unit and including a catalyst layer for subjecting the exhaust gas discharged from the adsorption reaction unit and inflowed to a catalyst treatment, and a water injection port connected to a transfer path of the exhaust gas flowed into the catalyst reaction unit and supplying water. <P>COPYRIGHT: (C)2007,JPO&INPIT |
