| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress variation in etching rate between wafers, especially, immediately after starting plasma etching treatment. <P>SOLUTION: The plasma treatment device comprises a power supply wire to a substrate 104 to be treated and a power supply wire to a member 121 arranged on the periphery of the substrate to be treated, a power supply 105 for supplying power to the power supply wires, and a switch 124 for switching a power supply wire via a capacitor of variable capacitance and a power supply wire connected directly. Interconnect line to the substrate 104 to be treated is connected with the power supply 105 through the capacitor of variable capacitance in the switch 124, or connected directly with the power supply 105 not through the capacitor of variable capacitance; and the power supply wire to the member 121 arranged on the periphery of the substrate to be treated is connected directly with the power supply 105. <P>COPYRIGHT: (C)2007,JPO&INPIT |
