| 摘要 |
The formation and adhesion of excessive deposits are suppressed in an etching process in which a resist of the ArF lithography generation and later is used as a mask. In an etching treatment method which is performed, by use of an etching apparatus which has a vacuum chamber 101 , means for setting a sample to be worked 102 which sets a sample to be worked 107 , cooling gas introducing means 111 , a high frequency power source 106 , a matching device 105 , power introducing means 104 , and a high frequency bias power source 110 , by converting a gas introduced into the vacuum chamber 101 into a plasma and applying high frequency bias power to the sample to be worked 107 , whereby surface treatment of the sample to be worked 107 is performed by the plasma, in treating the sample to be worked 107 by use of a highly depositable gas, the temperature of the sample to be worked 107 at the start of the treatment is maintained at a desired level.
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