发明名称 Semiconductor device undergoing defect detection test
摘要 A semiconductor device has a first operation mode and a second operation mode in which power supply with a higher voltage value than that in the first operation mode is provided. The semiconductor device includes a memory portion having memory cells for storing data and a power supply circuit portion supplying a first voltage and a second voltage to the memory portion. The memory portion writes or reads data to or from the memory cells based on the first voltage and the second voltage, and the power supply circuit portion provides a smaller voltage difference between the first voltage and the second voltage in the second operation mode as compared with the voltage difference in the first operation mode.
申请公布号 US2007183214(A1) 申请公布日期 2007.08.09
申请号 US20070703672 申请日期 2007.02.08
申请人 RENESAS TECHNOLOGY CORP. 发明人 YOSHINAGA KENJI;MATSUMURA MASASHI;IGAUE FUTOSHI;AKIYAMA MIHOKO;MORISHITA FUKASHI
分类号 G11C29/00;G11C7/00;G11C11/34;G11C16/04;G11C16/06 主分类号 G11C29/00
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