| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which reduces possibility that repair information is preserved wrongly in a memory cell, and to provide a driving method thereof. <P>SOLUTION: In the semiconductor memory device which reserves the repair information while avoiding the memory cell of a defective bit and the driving method thereof, the semiconductor memory device comprises a memory array where a partial area is assigned to a repair information area and a data input/output part driven so as to read an information packet to be cooperated by a cooperated bit address of an information packet to be read. In the semiconductor memory device and the driving method, the repair information is preserved while the memory cell and the bit line where a defect occurs are avoided. Thus, the possibility that wrong repair information is preserved in the memory cell is reduced markedly. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
