| 摘要 |
An etching method includes the step of forming recesses by performing a plasma etching on a target layer of a target object in a processing chamber of a plasma processing apparatus. The plasma etching is performed by using a mask, which is formed on the target layer and is provided with opening patterns including a dense patterned region and a sparse patterned region, such that portions of the target layer exposed through the opening pattern are etched by a plasma to form the recesses; and the plasma is exited by introducing a processing gas. A ratio of a flow rate of HBr to a flow rate of Cl<SUB>2 </SUB>(HBr/Cl<SUB>2</SUB>) is greater than or equal to about 1.2 and a ratio of a flow rate of the fluorine-containing gas to the flow rate of HBr (fluorine-containing gas/HBr) is greater than or equal to about 1.0.
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