Semiconductor device, reticle used in fabricating method for the same and fabrication method thereof

摘要

A semiconductor device may include a substrate and a dielectric layer may be formed on the substrate. A multi-layered interconnection structure may be embedded in the dielectric layer. A plurality of bonding pads, which may be connected to an uppermost interconnection layer of the multi-layered interconnection structure, may be spaced apart in a first direction. A passivation layer may have a plurality of bonding pad openings that may be defined by a plurality of slits and respectively expose the bonding pads. The slits may overlap isolations of the bonding pads. Each of the slits may have an edge width that may be larger than a center width thereof.